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Analytical formulas for the unshielded magnetoresistive headSHTRIKMAN, S; SMITH, D.R.IEEE transactions on magnetics. 1996, Vol 32, Num 3, pp 1987-1994, issn 0018-9464, 2Conference Paper

Vers une nouvelle génération de capteurs magnétiques = New generation of magnetic sensorsDUPAS, C.Recherche (Paris, 1970). 1994, Num 270, pp 1206-1207, issn 0029-5671Article

Modeling the effects of boundary pinning in magnetoresistive elementsTOMLINSON, S. L; HILL, E. W; MILES, J. J et al.IEEE transactions on magnetics. 1991, Vol 27, Num 6, pp 4698-4700, issn 0018-9464, 2Article

Approximation of shielded MR head output for perpendicular mediaWILTON, D. T; SHUTE, H. A; BROWN, S. J. C et al.Journal of magnetism and magnetic materials. 2001, Vol 235, Num 1-3, pp 393-397, issn 0304-8853Conference Paper

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Characteristics of crosstalk in the reproduced output of a newly developed multi-channel MR headMACHIDA, K; HAYASHI, N; YONEDA, Y et al.Journal of magnetism and magnetic materials. 2001, Vol 226-30, pp 2054-2055, issn 0304-8853, 2Conference Paper

A design technique for magnetostrictive actuators with laminated active materialSTILLESJÖ, F; ENGDAHL, G; BERGQVIST, A et al.IEEE transactions on magnetics. 1998, Vol 34, Num 4, pp 2141-2143, issn 0018-9464, 1Conference Paper

Low writing current magnetoresistive random access memory (MRAM) with side metal pillar write word line (PWWL)HUNG, C. C; KAO, M. J; LIN, W. C et al.Journal of magnetism and magnetic materials. 2004, Vol 282, Num 1, pp 373-379, issn 0304-8853, 7 p.Conference Paper

Enhanced tunnel magnetoresistance by Hf-layer insertion in the AlO_x tunnel barriersBYONG GUK PARK; TAEK DONG LEE.IEEE transactions on magnetics. 2002, Vol 38, Num 5, pp 2706-2708, issn 0018-9464, 3 p., 1Conference Paper

MRAM-writing circuitry to compensate for thermal-variation of magnetization-reversal currentHONDA, Takeshi; SAKIMURA, Noboru; SUGIBAYASHI, Tadahiko et al.2002 symposium on VLSI circuits. 2002, pp 156-157, isbn 0-7803-7310-3, 2 p.Conference Paper

Effect of current density and stripe height on the amplitude of a dual-synthetic GMR headYUFENG LI.IEEE transactions on magnetics. 2001, Vol 37, Num 4, pp 1695-1697, issn 0018-9464, 1Conference Paper

ESD sensitivity of GMR heads : Effect of pulse length and number of eventsGUARISCO, Davide; LIN LI, Monica.IEEE transactions on magnetics. 2001, Vol 37, Num 4, pp 1710-1712, issn 0018-9464, 1Conference Paper

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Effect of stress induced anisotropy on Sal-biased MR head performanceCHOE, G; WU, A; GOCEMEN, F et al.IEEE transactions on magnetics. 1999, Vol 35, Num 5, pp 2565-2567, issn 0018-9464, 1Conference Paper

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Analytic and quasi-analytic formulae for MR headsSHUMEL SHTRIKMAN; SMITH, D. R.IEEE transactions on magnetics. 1996, Vol 32, Num 1, pp 43-48, issn 0018-9464Conference Paper

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The effects of pinning magnetization with geometrical features in thin permalloy filmsTOMLINSON, S. L; HILL, E. W.Journal of applied physics. 1993, Vol 73, Num 10, pp 6519-6521, issn 0021-8979, 2BConference Paper

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A CMOS macro-model for MTJ resistor of MRAM cellCHO, Chung-Hyun; JU HYUN KO; KIM, Daejeong et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 8, pp 1653-1657, issn 0031-8965, 5 p.Conference Paper

A 4Mb 0.18μm 1T1MTJ toggle MRAM memoryNAHAS, J; ANDRE, T; SUBRAMANIAN, C et al.IEEE International Solid-State Circuits Conference. 2004, pp 44-45, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Reliability tests of the MR head in helical-scan tape systemsSODA, Yutaka; NAGAI, Nobuyuki; KASUGA, Katsuhiro et al.IEEE transactions on magnetics. 2001, Vol 37, Num 4, pp 1716-1718, issn 0018-9464, 1Conference Paper